於電容耦合電漿處理室中之氣體流導的控制方法與設備

在電容耦合RF電漿(CCP)反應器或處理室中，在兩相向之上部與下部電極間之間隙中產生電漿。

圖1顯示處理基板用之CCP反應室100的實施例。

如所繪的，一下部電極組件包含一 ... TWI416620B-於電容耦合電漿處理室中之氣體流導的控制方法與設備 -GooglePatents 於電容耦合電漿處理室中之氣體流導的控制方法與設備 DownloadPDF Info Publicationnumber TWI416620B TWI416620B TW096149021A TW96149021A TWI416620B TWI416620B TWI416620B TWI416620B TW096149021A TW096149021A TW096149021A TW96149021A TW96149021A TW96149021A TWI416620B TWI416620B TWI416620B Authority TW Taiwan Priorartkeywords ring slots gasflow actuating grounding Priorartdate 2006-12-20 Applicationnumber TW096149021A Otherlanguages English(en) Otherversions TW200847268A (en Inventor RajinderDhindsa JerrelKAntolik ScottStevenot OriginalAssignee LamResCorp Prioritydate(Theprioritydateisanassumptionandisnotalegalconclusion.Googlehasnotperformedalegalanalysisandmakesnorepresentationastotheaccuracyofthedatelisted.) 2006-12-20 Filingdate 2007-12-20 Publicationdate 2013-11-21 2006-12-20 PrioritytoUS11/641,670 priority Critical patent/US8043430B2/en 2007-12-20 ApplicationfiledbyLamResCorp filed Critical LamResCorp 2008-12-01 PublicationofTW200847268A publication Critical patent/TW200847268A/zh 2013-11-21 Applicationgranted granted Critical 2013-11-21 PublicationofTWI416620B publication Critical patent/TWI416620B/zh Links Espacenet GlobalDossier Discuss 210000002381 Plasma Anatomy 0.000 title claims abstract description 51 230000001276 controllingeffect Effects 0.000 title claims abstract description 29 238000000034 method Methods 0.000 claims abstract description 24 239000000758 substrate Substances 0.000 claims abstract description 24 230000000903 blocking Effects 0.000 claims description 85 230000000875 corresponding Effects 0.000 claims description 6 238000001514 detectionmethod Methods 0.000 claims description 6 239000012530 fluid Substances 0.000 claims description 6 229910052904 quartz Inorganicmaterials 0.000 claims description 5 239000010453 quartz Substances 0.000 claims description 5 VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicondioxide Inorganicmaterials 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C23C16/455—Chemicalcoatingbydecompositionofgaseouscompounds,withoutleavingreactionproductsofsurfacematerialinthecoating,i.e.chemicalvapourdeposition[CVD]processescharacterisedbythemethodofcoatingcharacterisedbythemethodusedforintroducinggasesintoreactionchamberorformodifyinggasflowsinreactionchamber C—CHEMISTRY;METALLURGY C23—COATINGMETALLICMATERIAL;COATINGMATERIALWITHMETALLICMATERIAL;CHEMICALSURFACETREATMENT;DIFFUSIONTREATMENTOFMETALLICMATERIAL;COATINGBYVACUUMEVAPORATION,BYSPUTTERING,BYIONIMPLANTATIONORBYCHEMICALVAPOURDEPOSITION,INGENERAL;INHIBITINGCORROSIONOFMETALLICMATERIALORINCRUSTATIONINGENERAL C23C—COATINGMETALLICMATERIAL;COATINGMATERIALWITHMETALLICMATERIAL;SURFACETREATMENTOFMETALLICMATERIALBYDIFFUSIONINTOTHESURFACE,BYCHEMICALCONVERSIONORSUBSTITUTION;COATINGBYVACUUMEVAPORATION,BYSPUTTERING,BYIONIMPLANTATIONORBYCHEMICALVAPOURDEPOSITION,INGENERAL C23C16/00—Chemicalcoatingbydecompositionofgaseouscompounds,withoutleavingreactionproductsofsurfacematerialinthecoating,i.e.chemicalvapourdeposition[CVD]processes C23C16/44—Chemicalcoatingbydecompositionofgaseouscompounds,withoutleavingreactionproductsofsurfacematerialinthecoating,i.e.chemicalvapourdeposition[CVD]processescharacterisedbythemethodofcoating C23C16/4417—Methodsspeciallyadaptedforcoatingpowder H—ELECTRICITY H01—BASICELECTRICELEMENTS H01J—ELECTRICDISCHARGETUBESORDISCHARGELAMPS H01J37/00—Dischargetubeswithprovisionforintroducingobjectsormaterialtobeexposedtothedischarge,e.g.forthepurposeofexaminationorprocessingthereof H01J37/32—Gas-filleddischargetubes,e.g.forsurfacetreatmentofobjectssuchascoating,plating,etching,sterilisingorbringingaboutchemicalreactions H01J37/32431—Constructionaldetailsofthereactor H01J37/3244—Gassupplymeans H01J37/32449—Gascontrol,e.g.controlofthegasflow H—ELECTRICITY H01—BASICELECTRICELEMENTS H01J—ELECTRICDISCHARGETUBESORDISCHARGELAMPS H01J37/00—Dischargetubeswithprovisionforintroducingobjectsormaterialtobeexposedtothedischarge,e.g.forthepurposeofexaminationorprocessingthereof H01J37/32—Gas-filleddischargetubes,e.g.forsurfacetreatmentofobjectssuchascoating,plating,etching,sterilisingorbringingaboutchemicalreactions H01J37/32431—Constructionaldetailsofthereactor H01J37/32623—Mechanicaldischargecontrolmeans H—ELECTRICITY H01—BASICELECTRICELEMENTS H01J—ELECTRICDISCHARGETUBESORDISCHARGELAMPS H01J37/00—Dischargetubeswithprovisionforintroducingobjectsormaterialtobeexposedtothedischarge,e.g.forthepurposeofexaminationorprocessingthereof H01J37/32—Gas-filleddischargetubes,e.g.forsurfacetreatmentofobjectssuchascoating,plating,etching,sterilisingorbringingaboutchemicalreactions H01J37/32431—Constructionaldetailsofthereactor H01J37/32623—Mechanicaldischargecontrolmeans H01J37/32633—Baffles H—ELECTRICITY H01—BASICELECTRICELEMENTS H01J—ELECTRICDISCHARGETUBESORDISCHARGELAMPS H01J37/00—Dischargetubeswithprovisionforintroducingobjectsormaterialtobeexposedtothedischarge,e.g.forthepurposeofexaminationorprocessingthereof H01J37/32—Gas-filleddischargetubes,e.g.forsurfacetreatmentofobjectssuchascoating,plating,etching,sterilisingorbringingaboutchemicalreactions H01J37/32431—Constructionaldetailsofthereactor H01J37/32623—Mechanicaldischargecontrolmeans H01J37/32642—Focusrings H—ELECTRICITY H01—BASICELECTRICELEMENTS H01L—SEMICONDUCTORDEVICES;ELECTRICSOLIDSTATEDEVICESNOTOTHERWISEPROVIDEDFOR H01L21/00—Processesorapparatusadaptedforthemanufactureortreatmentofsemiconductororsolidstatedevicesorofpartsthereof H01L21/02—Manufactureortreatmentofsemiconductordevicesorofpartsthereof H01L21/04—Manufactureortreatmentofsemiconductordevicesorofpartsthereofthedeviceshavingatleastonepotential-jumpbarrierorsurfacebarrier,e.g.PNjunction,depletionlayerorcarrierconcentrationlayer 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C23C16/455—Chemicalcoatingbydecompositionofgaseouscompounds,withoutleavingreactionproductsofsurfacematerialinthecoating,i.e.chemicalvapourdeposition[CVD]processescharacterisedbythemethodofcoatingcharacterisedbythemethodusedforintroducinggasesintoreactionchamberorformodifyinggasflowsinreactionchamber C23C16/45587—Mechanicalmeansforchangingthegasflow C—CHEMISTRY;METALLURGY C23—COATINGMETALLICMATERIAL;COATINGMATERIALWITHMETALLICMATERIAL;CHEMICALSURFACETREATMENT;DIFFUSIONTREATMENTOFMETALLICMATERIAL;COATINGBYVACUUMEVAPORATION,BYSPUTTERING,BYIONIMPLANTATIONORBYCHEMICALVAPOURDEPOSITION,INGENERAL;INHIBITINGCORROSIONOFMETALLICMATERIALORINCRUSTATIONINGENERAL C23C—COATINGMETALLICMATERIAL;COATINGMATERIALWITHMETALLICMATERIAL;SURFACETREATMENTOFMETALLICMATERIALBYDIFFUSIONINTOTHESURFACE,BYCHEMICALCONVERSIONORSUBSTITUTION;COATINGBYVACUUMEVAPORATION,BYSPUTTERING,BYIONIMPLANTATIONORBYCHEMICALVAPOURDEPOSITION,INGENERAL C23C16/00—Chemicalcoatingbydecompositionofgaseouscompounds,withoutleavingreactionproductsofsurfacematerialinthecoating,i.e.chemicalvapourdeposition[CVD]processes C23C16/44—Chemicalcoatingbydecompositionofgaseouscompounds,withoutleavingreactionproductsofsurfacematerialinthecoating,i.e.chemicalvapourdeposition[CVD]processescharacterisedbythemethodofcoating C23C16/455—Chemicalcoatingbydecompositionofgaseouscompounds,withoutleavingreactionproductsofsurfacematerialinthecoating,i.e.chemicalvapourdeposition[CVD]processescharacterisedbythemethodofcoatingcharacterisedbythemethodusedforintroducinggasesintoreactionchamberorformodifyinggasflowsinreactionchamber C23C16/45587—Mechanicalmeansforchangingthegasflow C23C16/45591—Fixedmeans,e.g.wings,baffles C—CHEMISTRY;METALLURGY C23—COATINGMETALLICMATERIAL;COATINGMATERIALWITHMETALLICMATERIAL;CHEMICALSURFACETREATMENT;DIFFUSIONTREATMENTOFMETALLICMATERIAL;COATINGBYVACUUMEVAPORATION,BYSPUTTERING,BYIONIMPLANTATIONORBYCHEMICALVAPOURDEPOSITION,INGENERAL;INHIBITINGCORROSIONOFMETALLICMATERIALORINCRUSTATIONINGENERAL C23C—COATINGMETALLICMATERIAL;COATINGMATERIALWITHMETALLICMATERIAL;SURFACETREATMENTOFMETALLICMATERIALBYDIFFUSIONINTOTHESURFACE,BYCHEMICALCONVERSIONORSUBSTITUTION;COATINGBYVACUUMEVAPORATION,BYSPUTTERING,BYIONIMPLANTATIONORBYCHEMICALVAPOURDEPOSITION,INGENERAL C23C16/00—Chemicalcoatingbydecompositionofgaseouscompounds,withoutleavingreactionproductsofsurfacematerialinthecoating,i.e.chemicalvapourdeposition[CVD]processes C23C16/44—Chemicalcoatingbydecompositionofgaseouscompounds,withoutleavingreactionproductsofsurfacematerialinthecoating,i.e.chemicalvapourdeposition[CVD]processescharacterisedbythemethodofcoating C23C16/52—Controllingorregulatingthecoatingprocess H—ELECTRICITY H01—BASICELECTRICELEMENTS H01J—ELECTRICDISCHARGETUBESORDISCHARGELAMPS H01J37/00—Dischargetubeswithprovisionforintroducingobjectsormaterialtobeexposedtothedischarge,e.g.forthepurposeofexaminationorprocessingthereof H01J37/32—Gas-filleddischargetubes,e.g.forsurfacetreatmentofobjectssuchascoating,plating,etching,sterilisingorbringingaboutchemicalreactions H01J37/32431—Constructionaldetailsofthereactor H01J37/32798—FurtherdetailsofplasmaapparatusnotprovidedforingroupsH01J37/3244-H01J37/32788;specialprovisionsforcleaningormaintenanceoftheapparatus H01J37/32816—Pressure H—ELECTRICITY H01—BASICELECTRICELEMENTS H01J—ELECTRICDISCHARGETUBESORDISCHARGELAMPS H01J37/00—Dischargetubeswithprovisionforintroducingobjectsormaterialtobeexposedtothedischarge,e.g.forthepurposeofexaminationorprocessingthereof H01J37/32—Gas-filleddischargetubes,e.g.forsurfacetreatmentofobjectssuchascoating,plating,etching,sterilisingorbringingaboutchemicalreactions H01J37/32431—Constructionaldetailsofthereactor H01J37/32798—FurtherdetailsofplasmaapparatusnotprovidedforingroupsH01J37/3244-H01J37/32788;specialprovisionsforcleaningormaintenanceoftheapparatus H01J37/32816—Pressure H01J37/32834—Exhausting H—ELECTRICITY H01—BASICELECTRICELEMENTS H01J—ELECTRICDISCHARGETUBESORDISCHARGELAMPS H01J37/00—Dischargetubeswithprovisionforintroducingobjectsormaterialtobeexposedtothedischarge,e.g.forthepurposeofexaminationorprocessingthereof H01J37/32—Gas-filleddischargetubes,e.g.forsurfacetreatmentofobjectssuchascoating,plating,etching,sterilisingorbringingaboutchemicalreactions H01J37/32917—Plasmadiagnostics H01J37/3299—Feedbacksystems Description 於電容耦合電漿處理室中之氣體流導的控制方法與設備 本發明係關於電漿處理方法及其設備，尤有關於電容耦合電漿處理室中之氣體流導的控制方法與設備。

積體電路係由晶圓或基板所形成，在晶圓或基板上形成圖型化微電子層。

在基板的處理中，通常利用電漿在基板上沉積薄膜或蝕刻該等薄膜之所欲部份。

在下個世代微電子層中，微縮特徵尺寸及新材料的實施已在電漿處理設備中加入新的要求。

為了較佳產率，較小特徵、較大基板尺寸及新處理技術(如雙鑲嵌蝕刻技術)需要電漿參數的精確控制(如基板各處之電漿密度及一致性)。

茲提供一種在電漿處理室中控制氣體流導之設備的實施例，該電漿處理室包含一上部電極，該上部電極相向於一下部電極而配置，該下部電極用以支撐一基板，該設備包含：一接地環，用以同心地環繞該下部電極，該接地環包含形成於其內之一第一組開槽；一旁通阻塞環；一覆蓋環，配置在該接地環及旁通阻塞環之上，該覆蓋環包含形成於其內之一第二組開槽；及一機構，用以將該旁通阻塞環相對於該接地環而移動，俾控制(i)與(ii)之間經由該第一及第二組開槽的氣體流導，其中：(i)為一開啟狀態，在當中該第一組開槽係與該第二組開槽呈流體連通，以使氣體流動穿過該第一及第二組開槽；及(ii)為一關閉狀態，在當中該第一組開槽被該旁通阻塞環所阻隔，以使氣體無法流動穿過該第一及第二組開槽。

茲提供另一種在電漿處理室中控制氣體流導的設備，該電漿處理室包含一上部電極，該上部電極相向於一下部電極而配置，該下部電極用以支撐一基板，該設備包含：一靜止的接地環，用 以同心地環繞該下部電極，該接地環包含形成於其內之一第一組開槽；一靜止的覆蓋環，包含形成於其內之一第二組開槽；一旁通阻塞環，配置在該接地環與該覆蓋環之間，該旁通阻塞環包含形成於其內之一第三組開槽；及一機構，用以將該旁通阻塞環相對於該接地環而旋轉，俾改變該第一與第三組開槽之間的一重疊量，藉以控制(i)與(ii)之間經由該第一、第二及第三組開槽的氣體流導，其中：(i)為一開啟狀態，在當中該第一組開槽係與該第三組開槽呈流體連通，以使氣體流動穿過該第一、第二及第三組開槽；及(ii)為一關閉狀態，在當中該第一組開槽被該旁通阻塞環所阻隔，以使氣體無法流動穿過該第一、第二及第三組開槽。

茲提供一種在電漿處理室中控制氣體流導之設備的另一實施例，該電漿處理室包含一上部電極，該上部電極相向於一下部電極而配置，該下部電極用以支撐一基板，該設備包含：一靜止的接地環，用以同心地環繞該下部電極，該接地環包含形成於其內之一第一組開槽；一靜止的覆蓋環，配置在該接地環之上，該覆蓋環包含形成於其內之一第二組開槽，該第二組開槽的每一個開槽對準第一組開槽的一對應開槽；一旁通阻塞環，配置在該接地環下方，該旁通阻塞環包含形成於其上之凸部，其中，每個凸部與界定一對應的第一開槽之一內表面間的一間距，決定經由該第一及第二組開槽之該氣體流導；及一機構，用以將該旁通阻塞環相對於該接地環而移動以調整該間距，俾改變(i)與(ii)之間經由該第一及第二組開槽的氣體流導，其中：(i)為一開啟狀態，在當中該第一組開槽係與該第二組開槽呈流體連通，以使氣體流動穿過該第一及第二組開槽；及(ii)為一關閉狀態，在當中該第一組開槽被該旁通阻塞環所阻隔，以使氣體無法流動穿過該第一及第二組開槽。

在電容耦合RF電漿(CCP)反應器或處理室中，在兩相向之上 部與下部電極間之間隙中產生電漿。

圖1顯示處理基板用之CCP反應室100的實施例。

如所繪的，一下部電極組件包含一集中環108及一夾頭104，夾頭104用以在處理室操作期間將基板106固定在適當的地方。

夾頭104例如可為靜電夾頭，且由RF電源110供給射頻(RF)功率。

上部電極組件包含一上部電極114及一擋板或噴淋頭116。

操作中可將上部電極114接地，或是由另一RF電源120供電。

經由導管122提供氣流並通過擋板116。

在間隙126中將氣體電激化成電漿。

電漿可由限制環102a、102b、102c所侷限。

氣體通過環102間的間隔/間隙124，且利用真空泵從處理室經由壁118而排出。

電漿特性受到通過間隙124之氣體流率所影響。

從擋板116至排氣之流徑的總氣體流導，取決於包含環數及環間之間隙尺寸的數種因子。

在一實施例中，間隙124是可調整的且由一間隙控制機構(圖1中未顯示)所控制。

已確定在基板之電漿處理的某些過程中，處理之一或多個步驟需要超過間隙控制機構之最大容量的流導程度。

在諸如此類的過程中，需要將基板自處理室中卸載並且在可達到上述流導程度之其他處理室中處理該基板。

鑑於此問題，在電容耦合電漿(CCP)反應器或處理室中提供可操作的設備，俾提供擴大、可變的氣體流導範圍。

該等設備使得電漿處理室能提供一寬廣範圍的電漿條件。

圖2顯示一電容耦合電漿(CCP)反應器或處理室200之一部份的例示性實施例。

處理室200設有提供處理室200中之擴大、可變氣體流導範圍的設備。

處理室200包含一上部電極組件202及一下部電極組件204，該下部電極組件204在電漿處理期間將基板固定在適當的位置。

該上部及下部電極組件202、204彼此分開-空隙或間隙208。

室壁214包含一門或閘216，經由該閘216將基板加以卸載/裝載入處理室200。

上部電極組件202包含一氣體分佈構件203(如噴淋頭電極)， 經由該氣體分佈構件203可將處理氣體提供至間隙208。

利用供應至下部電極組件204的RF功率，將供應至間隙208的處理氣體激化成電漿態。

藉由晶圓區域壓力(WAP)/限制環組件206可侷限間隙208中的電漿，該限制環組件206包含一疊的限制環207。

該設備可包含用於限制環之間隙控制機構。

間隙208中的中性氣體物種沿一般水平方向通過限制環207間的間隔並進入處理室空間210。

利用耦合至壁214的真空泵212將氣體從處理室空間210排出。

從氣體分佈構件203至處理室空間210之氣體流的速率，影響間隙208中的壓力。

為了要增加氣體流速率，提供一額外氣體流導路徑或環道，其(平行於)從氣體分佈構件203經由限制環207間的間隙至處理室空間210的路徑。

圖3A顯示圖2中所示之區域A的放大圖，其說明在接地環314中用於控制旁通槽312a、312b(在此統稱為環312)之氣體流導的機構320。

圖3B顯示機構320的側視圖。

圖3C及3D顯示機構320、旁通阻塞環308及接地環314的部份切開頂視圖，其中為了說明之目的而將具開槽的接地覆蓋環304(圖3A)移除。

如圖3A-3D中所示，下部電極組件包含：接地環314；旁通阻塞環308，安裝在形成於接地環314中之環形通道內；及接地覆蓋環304。

較佳為由鐵氟龍(PTFE)等等所構成的多球體316被用來減少在阻塞環308移動期間產生於接地環314與阻塞環308之間的旋轉摩擦力。

圖3E顯示包含多重開槽310a、310b(在此統稱為開槽310)之旁通阻塞環308的頂視圖，該多重開槽沿阻塞環308之徑向延伸。

同樣地，覆蓋環304及接地環314各自包含相似於開槽310之開槽306a、306b(在此統稱為開槽306)及開槽312a、312b。

開槽306、310及312可具有任何合適形狀，例如長方形或梯形。

接地環314係由如鋁之導電材料構成；覆蓋環304係由如石英之介電材料構成；及阻塞環308係由如石英或SiC之介電材料構成。

覆蓋環304及接地環314係靜止的，而旁通阻塞環308可相 對於覆蓋環304及接地環314而旋轉。

當從頂端觀察時，形成於覆蓋環304及接地環314中的旁通槽306及312，係相對於彼此而對準，其中每一對開槽306a、312a及306b、312b形成一直線的視線。

控制機構320係可操作的，俾將旁通阻塞環308相對於靜止的覆蓋環304及靜止的接地環314而旋轉，以控制經由開槽306、310及312的氣體流。

限制環組件(或WAP環組件)206包含一WAP環300及一疊限制環302。

此後，術語「限制環」及「WAP環」可交替使用。

限制環組件206係利用一合適的致動機構而沿箭頭301的方向移動，該合適的致動機構例如耦合至CAM環的活塞303。

箭頭301的方向可平行於三個環(304、308及314)的軸向。

在共有的美國專利第6,019,060號中發現CAM環的更詳細說明，在此合併其全文作為參考。

限制環組件206係耦合至機構320。

機構320包含：一致動桿或致動棒324；一槓桿332，樞接在軸328之軸線上；及一延長臂330，固定至軸328。

軸328的軸線可垂直於接地環314的軸向。

在槓桿332之一端上設有配重326，而在槓桿332之其他端上設有致動元件322。

藉由作用在配重326上的重力，將致動元件322推壓於致動桿324之下部尖端。

當限制環組件206向上移動時，致動桿324也向上移動。

然後由於配重326的力量，槓桿332沿順時鐘方向(圖3B)旋轉且臂330的尖端沿箭頭334的方向移動。

於是，臂330將旁通阻塞環308沿方向334旋轉，使得旁通槽310對準其他開槽312及306，以使氣體流通道經由三組開槽而加以形成。

圖3C顯示在全開啟氣體流狀態中之機構320的結構。

在圖3C中，為了說明的目的而將具有開槽的接地覆蓋環304移除。

因此，機構320的操作提供經由開槽306、310、312之額外氣體流導路徑。

當限制環組件206向下移動時，致動桿324亦將致動元件322向下推。

然後槓桿332沿反時鐘方向旋轉且臂330之尖端沿箭頭336(圖3B)的方向移動。

於是，旁通阻塞環308沿方向336移動， 因而部份地阻隔旁通槽306及312。

當致動元件322處在其最低位置時，如圖3D中所示，旁通槽306及312係完全被旁通阻塞環308所阻隔。

圖3D顯示在關閉氣體流狀態中之機構320的結構。

開槽306、310及312可具有各種形狀及尺寸，其可在彼此對準之後立即提供氣體流通道。

圖3F為一旁通阻塞環360之替代性實施例的頂視圖。

如所繪的，阻塞環360具有沿其周邊方向排列的一列開槽362。

在此實施例中，覆蓋環及接地環可具有相似於阻塞環360之開槽結構。

在圖4A-7所示之實施例中，為了說明之目的，每一例示性覆蓋環、阻塞環及接地環係顯示成包含一或兩列的開槽。

然而，在其他實施例中，這三個環皆可具有其他合適列數及每列中其他合適的開槽數。

圖4A顯示根據另一例示性實施例之包含阻塞環控制機構420的設備。

圖4B及4C顯示機構420、旁通阻塞環408及接地環414之部份切開頂視圖。

在這些圖中，為了說明之目的而將具有開槽的接地覆蓋環404(圖4A)移除。

如圖3A中所示之實施例一樣，下部電極組件包含：一接地環414；旁通阻塞環408，安裝在形成於接地環414中之環形通道內；及具有開槽之接地覆蓋環404。

在此實施例中，接地環414及覆蓋環404係靜止的，而可將阻塞環408相對於覆蓋環404及接地環414來旋轉。

環404、408、414可由如圖3A中所示之各環的相同材料所製成。

如圖4A中所示，藉由如CAM環之合適機構，可將限制環組件206沿箭頭401的方向移動，並且將限制環組件206耦合至機構420。

在阻塞環408移動期間，較佳為由PTFE等等所構成之多球體416係用來減少接地環414與阻塞環408之間的旋轉摩擦力。

機構420包含：一致動桿422，耦合至限制環組件206並具有一錐形部424；一外殼428，固定至接地環414；一致動彈簧426，用以彈性地推壓致動桿422及限制環組件206頂住CAM環；一槓桿430，樞接在一點438處；一臂433，具有固定至槓桿430之一 端；及一槓桿彈簧434，用以彈性地推壓槓桿430頂住錐形部424之側表面。

錐形部424之側表面係與槓桿430滑接。

彈簧426為非必要的。

如美國專利第6,019,060號中所詳述的：限制環組件206可包含一彈簧，用以彈性地推壓限制環組件206頂住CAM環。

操作中，當致動桿422向下移動時(較佳為沿接地環414之軸向)，錐形部424之側表面將槓桿430推到一邊，導致槓桿430在軸440上沿反時鐘方向(當自頂端觀察)旋轉。

可將軸440定向為平行於接地環414之軸向。

當槓桿430旋轉時，臂433及耦合至臂433的旁通阻塞環408，沿箭頭432(圖3B)的方向旋轉。

在此旋轉期間，阻塞環408之旁通槽410逐漸由覆蓋環404及接地環414所阻隔(覆蓋)，直到該等開槽410被完全阻隔(如圖4B所示之位置)。

當致動桿422向上移動時，槓桿430旋轉以沿箭頭436(圖4C)的方向打開阻塞環408。

如圖4C中所示，當致動桿422到達其移動上限時，開槽406、410及412彼此對準，並且機構420提供經由開槽406、410及412之最大氣體流導。

圖5A顯示根據另一例示性實施例之包含阻塞環控制機構520之設備。

在經說明的實施例中，下部電極組件具有相似於圖3A之實施例的結構。

如圖5A中所示，藉由一合適機構將限制環組件206沿箭頭502的方向移動，較佳的情況是沿接地環514之軸向移動。

機構520能夠控制阻塞環508。

機構520包含：一致動桿522，耦合至限制環組件206；一第一致動元件524，由一彈簧528有彈性地將第一致動元件524推壓於致動桿522；一第二致動元件530，耦合至第一致動元件524，且用以在第一致動元件524沿箭頭502的方向移動時，在一軸533上旋轉；及一臂532，固定至第二致動元件530。

可將軸533定向為實質上平行於接地環514之軸向。

機構520亦包含固定至接地環514的支撐元件526，且支撐元件526提供用於第一致動元件524及彈簧528的機械支撐。

第一及第二致動元件524、530形成用以將直線運動轉換成旋轉運動的 機構。

例如，如所繪的，第一及第二致動元件524、530可為一接合齒輪對。

當限制環組件206沿箭頭502的方向移動時，臂532及耦合至臂532的旁通阻塞環508(帶有開槽510a、510b)，相對於靜止的接地環514(帶有開槽512a、512b)及具有開槽的接地覆蓋環504(帶有開槽506a、506b)而旋轉。

圖5B顯示帶有被阻塞環508阻隔的開槽506a之覆蓋環504的頂視圖。

此開槽結構為關閉氣體流狀態。

圖5C顯示帶有對準其他開槽510a、512a以從中形成氣體流通道的開槽506a之覆蓋環504的頂視圖。

此開槽結構為全開啟氣體流狀態。

機構520能夠控制阻塞環508，並提供關閉狀態與所繪之全開啟狀態之間的可變氣體流導，亦即接地環中的開槽512被阻塞環508部分重疊的狀態。

換句話說，開啟狀態的範圍可從全開啟至部份開啟。

圖2-5C中所示用以控制氣體流導之機構的例示性實施例，可藉由CAM環(為了簡潔在圖中未顯示)來驅動。

例如，CAM環可藉由一合適控制機構來控制，此控制機構可因應於量測處理室壓力之壓力計的偵測信號。

圖2-5C中所示的壓力計、CAM控制機構及每一個阻塞環控制機構可形成一回授控制系統，用以準確控制下部與上部電極組件(圖5A)間之間隙550中的電漿壓力。

圖6A顯示符合另一例示性實施例之包含阻塞環控制機構620的設備。

如所繪的，下部電極組件具有相似於圖3A之實施例的結構。

可選擇性地將限制環組件與機構620一起使用。

機構620控制阻塞環608俾控制氣體流導。

該機構包含具有一轉子623之馬達622及耦合至轉子623及阻塞環608的一L形臂624。

當馬達622將轉子623及臂624旋轉時，阻塞環608(帶有開槽610a、610b)係相對於靜止的接地環614(帶有開槽612a、612b)及具有開槽的接地覆蓋環604(帶有開槽606a、606b)而旋轉。

馬達622可為高準確度的步進馬達，並具有小尺寸以使其可位於接地環614附近或是固定至接地環614。

馬達622由馬達控制裝置或馬達控制器630所控制。

馬達控制裝置630因應於量測處理室壓力用之壓力計632的壓力偵測信號(interalia )。

壓力計632、馬達控制裝置630及阻塞環控制機構620可形成一回授系統，用以準確控制間隙640中的電漿壓力。

圖6B顯示在關閉狀態之覆蓋環604的頂視圖，其中覆蓋環604帶有被阻塞環608阻隔之開槽606a。

圖6C顯示在全開啟狀態之覆蓋環604的頂視圖，其中覆蓋環604帶有對準其他開槽610、612以形成氣體流通道之開槽606a。

然而，機構620能夠提供經由所示之兩狀態間之開槽的可變氣體流導，亦即接地環614中的開槽612被阻塞環604部分重疊的狀態。

換句話說，開啟狀態的範圍可從全開啟至部份開啟。

圖7顯示符合另一例示性實施例之包含阻塞環控制機構710的設備。

在此實施例中，下部電極組件702係相似於圖3A之實施例的下部電極組件。

在此實施例中，下部電極組件及上部電極組件(為了簡化並未顯示出)形成一間隙703，在間隙703處利用供應至下部電極組件702的RF功率，而將處理氣體激化成電漿態。

可選擇性地將限制環組件與機構710一起使用。

覆蓋環704及接地環706係靜止的。

阻塞環705係相對於覆蓋環704及接地環706而旋轉，俾控制經由環704、706中之開槽的氣體流導。

如所繪的，機構710包含：一手臂單元714a、714b、714c(在此統稱為手臂單元714)；一氣壓缸712，用以將手臂單元714沿箭頭711的方向驅動；及一運動轉換機構708。

在另一實施例中，可將手臂單元714的元件形成為一整體。

運動轉換機構708係耦合至手臂單元714及阻塞環705，並且能夠將手臂單元714的直線運動轉換成阻塞環705的旋轉運動。

在此實施例中，機構708可相似於機構320、420及520。

例如，元件714a可被用來代替致動桿324、422及522，而機構320、420及520的其他元件可被定位成容納自底側延伸的元件714c。

在另一實施例中，一電螺線管可由手臂控制裝置716所控制。

手臂控制裝置716可接收經由電纜718之控制信號。

電纜718亦可包含來自量測處理室壓力用之壓力計的壓力感測信號。

阻塞環控制機構710、壓力計及手臂控制裝置716可形成一回授控制系統，用以準確控制間隙703中的電漿壓力。

圖8顯示符合另一實施例之控制氣體流導的設備800。

如所繪的，上部電極組件包含：一上部電極804，具有將處理氣體分佈至間隙862用的噴淋頭結構；及一上部接地環806，圍繞上部電極804。

下部電極組件808包含：一靜電夾頭810，用以在電漿處理期間將基板固定在適當的位置；上部熱緣環812，其可由矽所構成；介電外環814，其可由石英所構成；及一內覆蓋環816，用以使接地環824免受於間隙862中的電漿。

為了簡化，在圖8中並未顯示上部及下部電極組件802、808之其他元件。

然而，在機構800可協同組件一起操作的範圍內，可將其他類型的上部及下部電極組件與此實施例一同實施。

間隙862中的電漿可由限制環組件839所侷限，限制環組件839包含一WAP環840及複數之限制環842。

間隙862中的中性物種穿過環840、842之間的間隙，並沿箭頭852的方向流動。

所說明的設備800提供一額外氣體流導路徑，並且包含：具有開槽之接地覆蓋環820，帶有多開槽822；接地環824，帶有對準開槽822之多開槽825；及一旁通阻塞環830，具有形成於其上之多凸部834。

藉由一合適的致動機構，阻塞環830沿箭頭852的方向是可動的，使得凸部834與開槽822、825之內表面間的間距(亦及流徑)可加以控制，藉以控制經由開槽822的氣體流速率。

例如，在一實施例中，耦合至限制環組件839的一或多個致動桿或致動棒850驅動阻塞環830。

在另一實施例中，相似於圖7之實施例之元件714C的手臂單元854係耦合至阻塞環830，並可操作來驅動阻塞環830。

接地覆蓋環820中的開槽822係相似於圖3E之實施例中的開槽310。

又，當自頂端觀察時，開槽822可以同心環之型式，且凸部亦可為同心環。

一般而言，相較於處理室空間(如860)之容積，上部與下部電極組件間之間隙區域(如862)的容積相對較小。

由於基板的蝕刻速率直接受到間隙中的電漿所影響，因此在處理室硬體沒有主要實體改變的情況下，限制環組件能夠在間隙的整個範圍內做到小容積壓力控制及電漿限制。

此外，由於間隙的容積小且氣體流導由圖3A-8所示之旁通槽所增加，因此在電漿處理室中可快速並準確地將電漿條件加以控制。

雖然本發明已參考其特定實施例加以詳細說明，然而熟悉此項技藝之人士將清楚的是：在不離開附加申請專利範圍之範疇下，利用等效設計仍可為多樣的改變與修正。

100‧‧‧CCP反應室 102a‧‧‧限制環 102b‧‧‧限制環 102c‧‧‧限制環 104‧‧‧夾頭 106‧‧‧基板 108‧‧‧集中環 110‧‧‧RF電源 114‧‧‧上部電極 116‧‧‧擋板 118‧‧‧壁 120‧‧‧RE電源 122‧‧‧導管 124‧‧‧間隙 126‧‧‧間隙 200‧‧‧處理室 202‧‧‧上部電極組件 203‧‧‧氣體分佈構件 204‧‧‧下部電極組件 206‧‧‧限制環組件 207‧‧‧限制環 208‧‧‧間隙 210‧‧‧處理室空間 212‧‧‧真空泵 214‧‧‧室壁 216‧‧‧閘 300‧‧‧WAP環 301‧‧‧箭頭 302‧‧‧限制環 303‧‧‧活塞 304‧‧‧接地覆蓋環 306a‧‧‧開槽 306b‧‧‧開槽 308‧‧‧旁通阻塞環 310a‧‧‧開槽 310b‧‧‧開槽 312a‧‧‧旁通槽 312b‧‧‧旁通槽 314‧‧‧接地環 316‧‧‧多球體 320‧‧‧機構 322‧‧‧致動元件 324‧‧‧致動桿 326‧‧‧配重 328‧‧‧軸 330‧‧‧延長臂 332‧‧‧槓桿 334‧‧‧箭頭 336‧‧‧箭頭 360‧‧‧旁通阻塞環 362‧‧‧開槽 401‧‧‧箭頭 404‧‧‧接地覆蓋環 406‧‧‧開槽 408‧‧‧旁通阻塞環 410‧‧‧開槽 412‧‧‧開槽 414‧‧‧接地環 416‧‧‧多球體 420‧‧‧阻塞環控制機構 422‧‧‧致動桿 424‧‧‧錐形部 426‧‧‧致動彈簧 428‧‧‧外殼 430‧‧‧槓桿 432‧‧‧箭頭 433‧‧‧臂 434‧‧‧槓桿彈簧 436‧‧‧箭頭 438‧‧‧點 440‧‧‧軸 502‧‧‧箭頭 504‧‧‧接地覆蓋環 506a‧‧‧開槽 506b‧‧‧開槽 508‧‧‧阻塞環 510a‧‧‧開槽 510b‧‧‧開槽 512a‧‧‧開槽 512b‧‧‧開槽 514‧‧‧接地環 520‧‧‧阻塞環控制機構 522‧‧‧致動桿 524‧‧‧第一致動元件 526‧‧‧支撐元件 528‧‧‧彈簧 530‧‧‧第二致動元件 532‧‧‧臂 533‧‧‧軸 550‧‧‧間隙 604‧‧‧接地覆蓋環 606a‧‧‧開槽 606b‧‧‧開槽 608‧‧‧阻塞環 610a‧‧‧開槽 610b‧‧‧開槽 612a‧‧‧開槽 612b‧‧‧開槽 614‧‧‧接地環 620‧‧‧阻塞環控制機構 622‧‧‧馬達 623‧‧‧轉子 624‧‧‧L形臂 630‧‧‧馬達控制裝置 632‧‧‧壓力計 640‧‧‧間隙 702‧‧‧下部電極組件 703‧‧‧間隙 704‧‧‧覆蓋環 705‧‧‧阻塞環 706‧‧‧接地環 708‧‧‧運動轉換機構 710‧‧‧阻塞環控制機構 711‧‧‧箭頭 712‧‧‧氣壓缸 714a‧‧‧手臂單元 714b‧‧‧手臂單元 714c‧‧‧手臂單元 716‧‧‧手臂控制裝置 718‧‧‧電纜 800‧‧‧設備 802‧‧‧上部電極組件 804‧‧‧上部電極 806‧‧‧上部接地環 808‧‧‧下部電極組件 810‧‧‧靜電夾頭 812‧‧‧上部熱緣環 814‧‧‧介電外環 816‧‧‧內覆蓋環 820‧‧‧接地覆蓋環 822‧‧‧開槽 824‧‧‧接地環 825‧‧‧開槽 830‧‧‧旁通阻塞環 834‧‧‧凸部 839‧‧‧限制環組件 840‧‧‧WAP環 842‧‧‧限制環 850‧‧‧致動桿 852‧‧‧箭頭 854‧‧‧手臂單元 860‧‧‧處理室空間 862‧‧‧間隙 圖1顯示一CCP反應室的略圖。

圖2顯示符合一實施例之CCP處理室的概略橫剖面圖。

圖3A顯示圖2之區域A的放大圖。

圖3B-3E顯示在圖3A所示之結構中控制氣體流導之設備的略圖。

圖3F顯示控制氣體流導之設備的替代性實施例之略圖。

圖4A-4C顯示控制氣體流導之設備的另一替代性實施例之略圖。

圖5A-5C顯示控制氣體流導之設備的另一替代性實施例。

圖6A-6C顯示符合另一實施例之控制氣體流導的設備。

圖7顯示符合另一實施例之控制氣體流導的設備。

圖8顯示符合另一實施例之控制氣體流導的設備。

206‧‧‧限制環組件 208‧‧‧間隙 300‧‧‧WAP環 301‧‧‧箭頭 302‧‧‧限制環 303‧‧‧活塞 304‧‧‧接地覆蓋環 306a‧‧‧開槽 306b‧‧‧開槽 308‧‧‧旁通阻塞環 310a‧‧‧開槽 310b‧‧‧開槽 312a‧‧‧旁通槽 312b‧‧‧旁通槽 314‧‧‧接地環 316‧‧‧多球體 320‧‧‧機構 324‧‧‧致動桿 326‧‧‧配重 328‧‧‧軸 330‧‧‧延長臂 Claims(28) 一種氣體流導控制設備，用以在一電漿處理室中控制氣體流導，該電漿處理室包含一上部電極，該上部電極與一下部電極對向配置，該下部電極用以支撐一基板，該氣體流導控制設備包含：一接地環，同心地環繞該下部電極，該接地環包含形成於其內之一第一組開槽；一旁通阻塞環；一覆蓋環，配置在該接地環及旁通阻塞環之上，該覆蓋環包含形成於其內之一第二組開槽；及一機構，用以將該旁通阻塞環相對於該接地環移動，俾控制在(i)一開啟狀態與(ii)一關閉狀態之間經由該第一及第二組開槽的氣體流導，其中：於(i)之開啟狀態中，該第一組開槽係與該第二組開槽呈流體連通，以使氣體流動穿過該第一及第二組開槽；而於(ii)之關閉狀態中，該第一組開槽被該旁通阻塞環所阻隔，而使氣體無法流動穿過該第一及第二組開槽。

如申請專利範圍第1項之氣體流導控制設備，其中：該接地環及該覆蓋環係靜止的；且該第一組開槽對準該第二組開槽。

如申請專利範圍第1項之氣體流導控制設備，其中該每一個覆蓋環及旁通阻塞環係由介電材料構成，而該接地環係由導電材料構成。

如申請專利範圍第3項之氣體流導控制設備，其中該覆蓋環及該旁通阻塞環係由石英或SiC構成，而該接地環係由金屬構成。

如申請專利範圍第1項之氣體流導控制設備，其中，用以將該旁通阻塞環相對於該接地環移動的該機構包含一限制環組件，該限制環組件係用以環繞形成在該上部電極與下部電極之間的一間隙且包含至少一限制環；且其中，該限制環組件可沿該接地環之軸向移動，俾控制經由該等限制環間之間隙的氣體流。

如申請專利範圍第1項之氣體流導控制設備，更包含：一壓力計，用以量測在該電漿處理室中之氣體壓力並用以傳送一偵測信號；及一控制裝置，因應於該偵測信號並有效地送出一控制信號來控制用以將該旁通阻塞環相對於該接地環移動的該機構。

一種控制流導的方法，該方法利用依據申請專利範圍第1項之氣體流導控制設備，該方法包含：在包含依據申請專利範圍第1項之該設備的該電漿處理室中，支撐一半導體基板；將處理氣體提供至該上部與下部電極之間的該間隙中；將該處理氣體激化成電漿；及操作該機構，俾控制經由該第一組開槽之一氣體流率。

一種氣體流導控制設備，用以在一電漿處理室中控制氣體流導，該電漿處理室包含一上部電極，該上部電極與一下部電極對向配置，該下部電極用以支撐一基板，該設備包含：一靜止的接地環，同心地環繞該下部電極，該接地環包含形成於其內之一第一組開槽；一靜止的覆蓋環，包含形成於其內之一第二組開槽；一旁通阻塞環，配置在該接地環與該覆蓋環之間，該旁通阻塞環包含形成於其內之一第三組開槽；及一機構，用以將該旁通阻塞環相對於該接地環而旋轉，俾改 變該第一與第三組開槽之間的重疊量，藉以控制在(i)一開啟狀態與(ii)一關閉狀態之間經由該第一、第二及第三組開槽的氣體流導，其中：在(i)之開啟狀態中，該第一組開槽係與該第三組開槽呈流體連通，以使氣體流動穿過該第一、第二及第三組開槽；而於(ii)之關閉狀態中，該第一組開槽被該旁通阻塞環所阻隔，而使氣體無法流動穿過該第一、第二及第三組開槽。

如申請專利範圍第8項之氣體流導控制設備，更包含介設於該旁通阻塞環與該接地環之間的至少一球體，當藉由該機構使該旁通阻塞環相對於該接地環及覆蓋環而旋轉時，該球體有效地減少介於其間之旋轉摩擦力。

如申請專利範圍第8項之氣體流導控制設備，其中該機構包含：一致動桿；及一致動系統，耦合至該致動桿並有效地使該致動桿沿該接地環之軸向移動。

如申請專利範圍第10項之氣體流導控制設備，其中該致動系統為一氣壓缸或一電螺線管。

如申請專利範圍第10項之氣體流導控制設備，其中：該致動桿包含一第一端及耦合至該致動系統的一第二端；及該機構更包含：一軸，以可轉動方式固定於該接地環，並具有實質上垂直於該接地環之該軸向的一旋轉軸線；一延長臂，具有：一端，固定至該軸之一端；及另一端，耦合至該旁通阻塞環；一槓桿，具有第一及第二端，並固定至位於其第一及第 二端中間的該軸；一配重，裝設至該槓桿的該第一端；及一致動元件，裝設至該槓桿的該第二端，並受該配重推壓抵住該致動桿之該第一端；其中，當藉由該致動系統將該致動桿沿該接地環之軸向移動時，該致動桿沿該軸之該旋轉軸線搖動該槓桿，導致該軸及該延長臂沿該軸之該旋轉軸線旋轉，因而造成該旁通阻塞環相對於該接地環旋轉。

如申請專利範圍第10項之氣體流導控制設備，其中：該致動桿包含耦合至該致動系統的一第一端及在該第一端反方向的一錐形端部；且該機構更包含：一槓桿，具有第一端部及第二端部，並環繞實質上平行於該接地環之該軸向的一軸線，樞接至位於該第一端部與第二端部中間的該接地環；該槓桿的該第二端部與該致動桿的該錐形端部滑接；一延長臂，具有：一端，固定至該槓桿之該第一端部；及另一端，耦合至該旁通阻塞環；及一第一彈簧，具有分別固定至該接地環及該槓桿的兩端，且能彈性地推壓該槓桿之該第二端部使其頂住該致動桿之該錐形端部；其中，當藉由該致動機構使該致動桿之該錐形端部沿該接地環之軸向移動時，該致動桿之該錐形端部搖動該槓桿，導致該延長臂旋轉，因而造成該旁通阻塞環相對於該接地環旋轉。

如申請專利範圍第13項之氣體流導控制設備，其中該機構更包含：一外殼，固定至該接地環，且具有部份圍繞該致動桿之該錐 形端部的壁；及一第二彈簧，介設於該等壁之其中一個與該致動桿的一頂端之間，並有效地朝向該致動系統推壓該致動桿。

如申請專利範圍第10項之氣體流導控制設備，其中：該致動桿包含一第一端及耦合於該致動系統的一第二端；且該機構更包含：一第一致動元件，接觸該致動桿之該第一端且可沿該接地環之該軸向移動；一第二致動元件，耦合至該第一致動元件，且環繞實質上平行於該接地環之該軸向的一軸，而樞接至該接地環；一延長臂，其一端處固定至該第二致動元件，而其另一端耦合至該旁通阻塞環；一彈簧，用以朝向該致動桿彈性地推壓該第一致動元件，藉以推壓該第一致動元件頂住該致動桿之該第一端；及一支撐元件，固定於該接地環並為該彈簧及該第一致動元件有效地提供機械支撐；其中，當藉由該致動系統將該致動桿沿該接地環之該軸向移動時，該致動桿沿該接地環之該軸向移動該第一致動元件，導致該第二致動元件及該延長臂旋轉，因而造成該旁通阻塞環相對於該接地環旋轉。

如申請專利範圍第8項之氣體流導控制設備，其中該機構包含：一馬達，具有一轉子；及一L形臂，其一端固定於該轉子，而其另一端耦合於該旁通阻塞環；其中，當該馬達旋轉該轉子時，該L形臂旋轉而造成該旁通阻塞環相對於該接地環旋轉。

. 如申請專利範圍第16項之氣體流導控制設備，更包含：一壓力計，用以量測在該電漿處理室中之氣體壓力並用以傳送一偵測信號；及一馬達控制器，因應於該偵測信號並有效地送出一控制信號來控制該馬達。

如申請專利範圍第8項之氣體流導控制設備，其中，該第一、第二及第三組開槽中的每一者，皆包含沿該接地環之周邊方向排列的至少一開槽。

如申請專利範圍第18項之氣體流導控制設備，其中該第一、第二及第三組開槽中的每一者，皆沿該接地環之一徑向延伸且皆具有一延長的長方形或梯形形狀。

一種氣體流導控制設備，用以在一電漿處理室中控制氣體流導，該電漿處理室包含一上部電極，該上部電極與一下部電極對向配置，該下部電極用以支撐一基板，該設備包含：一靜止的接地環，同心地環繞該下部電極，該接地環包含形成於其內之一第一組開槽；一靜止的覆蓋環，配置在該接地環之上，該覆蓋環包含形成於其內之一第二組開槽，該第二組開槽的每一個開槽對準第一組開槽的一對應開槽；一旁通阻塞環，配置在該接地環下方，該旁通阻塞環包含形成於其上之凸部，其中，每個凸部與界定一對應的第一開槽之一內表面間的一間距，決定經由該第一及第二組開槽之該氣體流導；及一機構，用以將該旁通阻塞環相對於該接地環移動以調整間距俾改變在(i)一開啟狀態與(ii)一關閉狀態之間經由該第一及第二 組開槽的氣體流導，其中：於(i)之開啟狀態中，該第一組開槽係與該第二組開槽呈流體連通，以使氣體流動穿過該第一及第二組開槽；而於(ii)之關閉狀態中，該第一組開槽被該旁通阻塞環所阻隔，而使氣體無法流動穿過該第一及第二組開槽。

如申請專利範圍第20項之氣體流導控制設備，其中該機構包含：一致動系統；及一致動桿，其一端固定於該旁通阻塞環，而其另一端耦合至該致動系統，該致動系統可有效地移動該致動桿。

如申請專利範圍第21項之氣體流導控制設備，其中，該致動系統包含一氣壓缸或一電螺線管。

如申請專利範圍第21項之氣體流導控制設備，其中，該致動系統包含一限制環組件，環繞該上部電極與下部電極之間的一間隙，該限制環組件包含至少一限制環，且該限制環組件可沿該接地環之一軸向移動，俾控制經由該等限制環間之間隙的一氣流速率。

如申請專利範圍第20項之氣體流導控制設備，其中該覆蓋環與旁通阻塞環中的每一個均由介電材料構成，而該接地環係由導電材料構成。

如申請專利範圍第24項之氣體流導控制設備，其中該覆蓋環及該旁通阻塞環係由石英或SiC構成，而該接地環係由金屬構成。

如申請專利範圍第20項之氣體流導控制設備，其中該第 一及第二組開槽中的每一組，皆包含沿該接地環之該周邊方向排列的至少一開槽。

如申請專利範圍第26項之氣體流導控制設備，其中該第一及第二組開槽中的每一組，皆沿該接地環之一徑向而延伸且皆具有一延長的長方形或梯形形狀。

如申請專利範圍第20項之氣體流導控制設備，其中該第一及第二組開槽中的每一組，皆包含一或更多同心的環形開槽。

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