Metal oxide RRAM switching mechanism based ... - IEEE Xplore
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By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament features controlling. TiN/HfO2/TiN ... SkiptoMainContent
延伸文章資訊
- 1A filament growth model for RRAM switching. The application ...
Download scientific diagram | A filament growth model for RRAM switching. The application of a po...
- 2以過渡金屬氧化物為基礎的新世代非揮發性電阻式記憶體
記憶體技術中，考量未來的微縮潛力，電阻式記憶體(RRAM) ... access memory (RRAM), nickel oxide (NiO), titanium ... RRAM 中局部...
- 3次世代電阻式記憶體發展 - 科技部
關於RRAM 的電阻切換機制，雖然已歷經 ... (Filament theory)，理論認為絕緣層中有可導電的 ... 表一電阻式記憶體(RRAM)與其他記憶體元件之基本特性比較圖.
- 4Metal oxide RRAM switching mechanism based ... - IEEE Xplore
By combining electrical, physical, and transport/atomistic modeling results, this study identifie...
- 5Resistive Random Access Memory (RRAM): an Overview of ...
Resistive Switching Mechanism. The switching of the RRAM cell is based on the growth of conductiv...
