RRAM filament

關於「RRAM filament」標籤，搜尋引擎有相關的訊息討論：

Resistive Random Access Memory (RRAM): an Overview of ...2020年4月22日 · RRAM relies on the formation and the rupture of conductive filaments corresponding ... the Industrial Technology Research Institute, Taiwan, are demonstrated to further ... Lin CY, Wu CY, Wu CY, Lee TC, Yang FL, Hu C, et al.Resistive Random Access Memory (RRAM): an ... - NCBI - NIH2020年4月22日 · RRAM relies on the formation and the rupture of conductive filaments corresponding ... the Industrial Technology Research Institute, Taiwan, are demonstrated to further ... Lin CY, Wu CY, Wu CY, Lee TC, Yang FL, Hu C, et al.Total ionizing dose (TID) effects of γ ray radiation on switching ...2014年8月29日 · Department of Electronic EngineeringChang Gung UniversityKwei-ShanTaiwan ... The Ag/AlO x /Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are ... In this work, the filament-based RRAM with the structure of Ag /AlO x /Pt was chosen as the ... Boca Raton, FL: CRC Press; 1988.Guiding the Growth of a Conductive Filament by Nanoindentation To ...2017年9月13日 · Facebook; Twitter; WeChat; Linked In; Reddit; Email ... However, the random growth of conductive filaments is an obstacle for the ... Z.Y. Ren, L.P. Zhang, G.L. Zhao, J. Teng, K.K. Meng, X.G. Xu, J. Miao, Y. Jiang. ... Investigation of resistive switching in PVP and ultra-thin HfOx based bilayer hybrid RRAM.A numerical study of multi filament formation in metal-ion based ...The conduction mechanism of the oxygen ion-based O-RRAM is due to the formation and ... as a conductive filament (CF), consisting of trap like oxygen vacancies (marked OV with a spatial ... This work is supported by Ministry of Science and Technology, Taiwan, under Project No. ... (CRC press, Boca Raton, FL, 2010), pp.Superior unipolar resistive switching in stacked ZrOx/ZrO2/ZrOx ...This study investigates the performance of unipolar-switched ZrO2 RRAM, ... Presumably, the leakage current flows via the conductive filament composed of ... by the Ministry of Science and Technology (MOST), Taiwan, under Contract No. ... J. T. Liu, C. S. Wu, C. C. Huang, C. Hu, and F. L. Yang, IEEE Int. Electron Dev.[PDF] ZrN-Based Flexible Resistive Switching Memory - Nanyang ...Index Terms— RRAM, nitrogen ions, conductive filament, resistive ... edu.tw). Color versions of one or more of the figures in this letter are available online at ...Electrode-controlled confinement of conductive filaments in a ...Filamentary-based resistive random-access memory (RRAM) has been demonstrated to be an emerging non-volatile memory (NVM) due to high speed,  ... twA nondestructive approach to study resistive switching mechanism ...Since CF in oxide RRAM can be regarded as a localized oxygen vacancy column ... 2(a) represents a schematic drawing of the conductive filament formed with highly localized oxygen vacancies. ... Y. H. Wang , K. H. Zhao , X. L. Shi , G. L. Xie , S. Y. Huang and L. W. Zhang , Appl. Phys. ... Facebook Twitter LinkedIn Youtube .Improving Unipolar Resistive Switching Uniformity with Cone ...2018年1月31日 · Resistive random access memory (RRAM) with inherent ... a new methodology that constructs cone-shaped conducting filaments by using ...