RRAM filament
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Resistive Random Access Memory (RRAM): an Overview of ...2020年4月22日 · RRAM relies on the formation and the rupture of conductive filaments corresponding ... the Industrial Technology Research Institute, Taiwan, are demonstrated to further ... Lin CY, Wu CY, Wu CY, Lee TC, Yang FL, Hu C, et al.Resistive Random Access Memory (RRAM): an ... - NCBI - NIH2020年4月22日 · RRAM relies on the formation and the rupture of conductive filaments corresponding ... the Industrial Technology Research Institute, Taiwan, are demonstrated to further ... Lin CY, Wu CY, Wu CY, Lee TC, Yang FL, Hu C, et al.Total ionizing dose (TID) effects of γ ray radiation on switching ...2014年8月29日 · Department of Electronic EngineeringChang Gung UniversityKwei-ShanTaiwan ... The Ag/AlO x /Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are ... In this work, the filament-based RRAM with the structure of Ag /AlO x /Pt was chosen as the ... Boca Raton, FL: CRC Press; 1988.Guiding the Growth of a Conductive Filament by Nanoindentation To ...2017年9月13日 · Facebook; Twitter; WeChat; Linked In; Reddit; Email ... However, the random growth of conductive filaments is an obstacle for the ... Z.Y. Ren, L.P. Zhang, G.L. Zhao, J. Teng, K.K. Meng, X.G. Xu, J. Miao, Y. Jiang. ... Investigation of resistive switching in PVP and ultra-thin HfOx based bilayer hybrid RRAM.A numerical study of multi filament formation in metal-ion based ...The conduction mechanism of the oxygen ion-based O-RRAM is due to the formation and ... as a conductive filament (CF), consisting of trap like oxygen vacancies (marked OV with a spatial ... This work is supported by Ministry of Science and Technology, Taiwan, under Project No. ... (CRC press, Boca Raton, FL, 2010), pp.Superior unipolar resistive switching in stacked ZrOx/ZrO2/ZrOx ...This study investigates the performance of unipolar-switched ZrO2 RRAM, ... Presumably, the leakage current flows via the conductive filament composed of ... by the Ministry of Science and Technology (MOST), Taiwan, under Contract No. ... J. T. Liu, C. S. Wu, C. C. Huang, C. Hu, and F. L. Yang, IEEE Int. Electron Dev.[PDF] ZrN-Based Flexible Resistive Switching Memory - Nanyang ...Index Terms— RRAM, nitrogen ions, conductive filament, resistive ... edu.tw). Color versions of one or more of the figures in this letter are available online at ...Electrode-controlled confinement of conductive filaments in a ...Filamentary-based resistive random-access memory (RRAM) has been demonstrated to be an emerging non-volatile memory (NVM) due to high speed, ... twA nondestructive approach to study resistive switching mechanism ...Since CF in oxide RRAM can be regarded as a localized oxygen vacancy column ... 2(a) represents a schematic drawing of the conductive filament formed with highly localized oxygen vacancies. ... Y. H. Wang , K. H. Zhao , X. L. Shi , G. L. Xie , S. Y. Huang and L. W. Zhang , Appl. Phys. ... Facebook Twitter LinkedIn Youtube .Improving Unipolar Resistive Switching Uniformity with Cone ...2018年1月31日 · Resistive random access memory (RRAM) with inherent ... a new methodology that constructs cone-shaped conducting filaments by using ...
延伸文章資訊
- 1次世代電阻式記憶體發展 - 科技部
關於RRAM 的電阻切換機制,雖然已歷經 ... (Filament theory),理論認為絕緣層中有可導電的 ... 表一電阻式記憶體(RRAM)與其他記憶體元件之基本特性比較圖.
- 2Overview of Resistive Random Access Memory (RRAM ...
This review article summarizes the materials, filament mechanisms, performance optimization, and ...
- 3國立交通大學機構典藏:前瞻新結構電阻式記憶體元件之製作( I )
電阻式記憶體(RRAM)為目前最具發展潛力的非揮發性記憶體,其擁有極低的操作電壓、極 ... 對於filament導通為基礎的RRAM而言,目前研究指出不穩定導通路徑 ...
- 4Investigation on the Conductive Filament Growth Dynamics in ...
Although some devices have been shown to present area-dependent resistance modulation, RRAM devic...
- 5以過渡金屬氧化物為基礎的新世代非揮發性電阻式記憶體
記憶體技術中,考量未來的微縮潛力,電阻式記憶體(RRAM) ... access memory (RRAM), nickel oxide (NiO), titanium ... RRAM 中局部...