Optimization of annealing process of pulsed RF decoupled ...
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Skiptomainnavigation Skiptosearch Skiptomaincontent OptimizationofannealingprocessofpulsedRFdecoupledplasmanitridationoxynitrides SangWooLim,DanielTekleab,TienYingLuo,PaulGrudowski DepartmentofChemicalandBiomolecularEngineering Researchoutput:
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- 1(PDF) Plasma nitridation of very thin gate dielectrics
Specifically, remote plasma nitridation (RPN) and decoupled plasma nitridation (DPN) of 1.4 nm ba...
- 2Ultrathin decoupled plasma nitridation SiON gate dielectrics ...
Decoupled plasma nitridation (DPN) SiON films for short channel complementary metal-oxide-semicon...
- 3Plasma nitridation optimization for sub-15Å gate dielectrics FN ...
In this work, ultra-thin plasma nitrided dielectrics down to. 12 Å have been produced by a decoup...
- 4Airiti Library華藝線上圖書館_去耦電漿氮化閘極氧化層之元件特性
The Characteristics of MOS Devices with Nitrided Gate Oxide by Decoupling Plasma Nitridation. 廖顯皜...
- 5Decoupled Plasma Nitridation of Ultrathin Gate Oxides for 65 ...
cm-3). - RTN. DPN-1. DPN-2. Decoupled Plasma Nitridation of Ultra-Thin Gate.
