Optimization of annealing process of pulsed RF decoupled ...
文章推薦指數: 80 %
Skiptomainnavigation Skiptosearch Skiptomaincontent OptimizationofannealingprocessofpulsedRFdecoupledplasmanitridationoxynitrides SangWooLim,DanielTekleab,TienYingLuo,PaulGrudowski DepartmentofChemicalandBiomolecularEngineering Researchoutput:
延伸文章資訊
- 1Optimization of annealing process of pulsed RF decoupled ...
Optimization of post nitridation annealing (PNA) in plasma nitrided gate oxide integration exhibi...
- 2Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate ...
Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced techn...
- 3Ultrathin decoupled plasma nitridation SiON gate dielectrics ...
Decoupled plasma nitridation (DPN) SiON films for short channel complementary metal-oxide-semicon...
- 4Ultra-thin decoupled plasma nitridation (DPN) - IEEE Xplore
Ultra-Thin Decoupled Plasma Nitridation. (DPN) Oxynitride Gate Dielectric for. 80-nm Advanced Tec...
- 5Mechanism of Silicon Dioxide Decoupled Plasma Nitridation ...
Results show that neutral N atoms and N2+ ions are the primary agents responsible for dielectric ...