SoG晶圓|GoS晶圓 - 自華光電有限公司
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自華光電®矽玻璃晶圓myBlossom® Silicon-on-Glass Wafer ... 自華光電®代理全球最大標準玻璃晶圓/石英晶圓現貨超市。
... SoG晶圓可使用於多種MEMS 應用。
這些晶圓會被客戶使用 ...
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自華光電®矽玻璃晶圓myBlossom®Silicon-on-GlassWafer
自華®標準SoG晶圓常備庫存明細
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自華光電®標準SoG晶圓現貨超市myBlossom®SoGWafer自華光電®代理全球最大標準玻璃晶圓/石英晶圓現貨超市。
自華光電®矽玻璃晶圓, 矽玻璃鍵合的晶圓,SoG晶圓myBlossom®Silicon-on-GlassWafer,SoGWafer自華光電®玻璃矽晶圓, 玻璃矽鍵合的晶圓,GoS晶圓myBlossom®Glass-on-SiliconWafer,GoSWafer
SoG晶圓可使用於多種MEMS應用。
這些晶圓會被客戶使用多種加工方式進一步加工成各種結構及其他MEMS的生產流程。
在這個SOG晶圓/GOS晶圓,標準玻璃和矽晶圓是透過陽極鍵合的方式形成不可逆的鍵合層。
單邊或是雙邊的晶圓複合體可透過使用材料本身所適合的CMP製程來研磨減薄到指定的厚度。
這些製程所使用的玻璃晶圓是由PlanOptik生產,矽晶圓則使用市場上知名的廠商所生產常用的單晶矽標準晶圓。
整個晶圓的整體厚度最小可以做到250µm,而個別層(玻璃或矽)可以減薄到大約接近20µm。
GOS與SOG晶圓的邊緣透過PlanOptik進行特殊邊緣研磨,故可以去除掉鍵合時鍵合的間隙且不會減少晶圓的直徑,透過這個工藝可以減少所有的負面效應(粉塵汙染,破片的風險,操作的問題)。
PlanOptik可以根據客戶的規格生產GOS的和SOG晶圓。
作為MEMS蓋板晶圓的基板並可以做到相當薄的玻璃厚度(如50µm),可與標準的矽晶圓基板搭配使用(如500µm)。
使用於MEMS光學產品做為蓋板,使矽晶圓部分區域在後製程可以被去除後形成透光區,例如使用氫氧化鉀(KOH)蝕刻來製造蓋板。
自華光電-德國PlanOptikAG玻璃晶圓/石英晶圓台灣獨家代理商。
AllenK.Lin|[email protected]|LINEID:Allen-007|WechatID:Allen-006|T:0910-782775
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myBlossom®Silicon-on-GlassWafer,SoGWafer
SoGWaferlist
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myBlossom®Silicon-on-GlassWafer,SoGWafermyBlossom®Glass-on-SiliconWafer,GoSWaferPlanOptikoffersthesebondedwafersasabasicsubstrateforvariousMEMSapplications.ThesewafersarethenfurtherprocessedbyitscustomersusingvariousstructuringstepsandotherMEMSproductionprocesses.InthecaseofGOS/SOGwafers,standardglassandsiliconwafersareirreversiblybondedtoeachotherbymeansofanodicbonding.OneorbothsidesofthewaferstackcanthensubsequentlybebackthinnedtothespecifiedfinalthicknessineachcaseusinggrindingandCMPprocessesadaptedtothematerialsinquestion.TheglasswafersemployedarebasewafersproducedbyPlanOptikitself,whilethesiliconwafersarewidelyavailablemonocrystallinestandardwafersbyreputablemanufacturers.Theminimumoverallthicknessoftheentirewaferisabout250µm,whiletheindividuallayers(glassorSi)canbethinneddownbyuptoapprox.20µm.TheedgesoftheGOSandSOGwafersproducedbyPlanOptikhaveaspecialedgegrind,whichremovesthebondgapwhichresultsduringbondingwithoutreducingthediameterofthewafer.Inthiswayallnegativeeffects(contaminationthroughparticles,dangerofbreaking,handlingproblems)areeliminated.PlanOptikmanufacturesGOSandSOGwafersaccordingtocustomerspecifications.
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Howglassandsiliconteamuptocreatepaper-thinwafersforfuturegadgets
GlassonWeb
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Howglassandsiliconteamuptocreatepaper-thinwafersforfuturegadgetsBaconandeggs.BatmanandRobin.BenandJerry.BOROFLOAT®andsilicon.It’seasytospotperfectpairs.SiliconwafersandBOROFLOAT®glassareonesuchduo,thankstoauniquesetofcharacteristicsthatmakethesematerialstheidealsolutionforcapsonLED,MEMS,opticalparts,andmicrofluidicdeviceseals.Aselectroniccircuitsshrinktoaccommodateadvancingsmartphonecameras,carsensors,hologramprojectors,andhigh-techglasses,paper-thinwaferswillactasthebackbonetotheintegratedcircuitsthatsupplycomputingpower.Together,thesetwosubstratesactasessentialplayersinthegadgetsoftodayandofthefuture.Here’show.Theincredibleshrinking—andgrowing—waferThemarchtowardcircuitminiaturizationpresseson.Small,lightweightconsumerdevicesrelyon3Dcircuitarchitecturebuiltontoultra-thinsiliconwafersinordertoperformatpeakcapacity.Thesewafersareextremelyflat,withpossiblethicknessdeviationslessthanonemicron.Toachievetheserazor-thindimensions,glasswafers,especiallySCHOTT’sborosilicateflatglassBOROFLOAT®,canactasaso-called“carrierwafer”inordertoaddprecisionandprocessstabilityduringproduction.Thesecarrierwafersprovideflatsupportduringthemanufacturingofultra-thinsiliconwafers.Duringmanufacturing,thesetwowafersaretemporarilybondedinordertosmooththesilicontoafoil-likethickness.Thisprocesscreatesasurfacefreefromimperfectionsandincreasesyieldsatareducedcost.Oncetheprocessiscomplete,UVlaserde-bondingseparatesthetwosubstrates,leavingbehindasiliconwaferjust50micronsthick.Atthesametime,largerwafers,withadiameterofupto12inches,representanewtrendinwafertechnology.Asthewafersizeincreasesindiameter,sodoestheefficiencyofthenetworkofintegratedcircuits.Buttoachievethatsize,thesubstratematerials—glassespecially—mustmaintainanextremelyflatsurfaceandoffersuperiorprocessstability.Thestrengthandflatnessthatcanbeachievedwithahigh-gradeglasslikeBOROFLOAT®allowthesewaferstoreachdiametersofuptoafootandgrowing.TheperfectmatchofmaterialsThequalityofanodicbondingforMEMSandotherelectroniccircuitryplacestheutmostdemandonprecision,andthethreatofahairlinecrack,warpedwafer,orunevensurfacecreatespressureforperfection.InMEMSapplications,glassandsiliconplaywelltogether—theirthermalexpansioncoefficientsareperfectlymatched,sotheybehavenearlythesameexpansionbehaviorduringprocessing.Thisqualityensuresproper,gap-freeanodicbonding,anditslowcoefficientoflinearthermalexpansionallowsBOROFLOAT®tohandleelevatedtemperatureswithoutbreakingordistorting.Insomeapplications,high-definitionmicrostructurechannelsareetchedintothesubstratetocreateso-called“labsonachip.”Throughouttheetchingandchemicalpolarizationprocesses,thewaferisexposedtomanychemicalsthatcandegradethesubstratematerials.BOROFLOAT®solvesthisproblemintwoways.First,themechanicalstrengthandstabilityofBOROFLOAT®ensurethesepatternsarepreciselyetchedontothesubstratewithoutitbreaking.Next,theglass’chemicalpropertiesensureitwon’tdegrade,weaken,orreactuncontrolledwiththesechemicalcocktails.Strongalone,butbettertogetherSiliconhasbeentheheartofthesemiconductorindustrysincethe1960s,andglasswafershavebecomesupplementaryplayersoverthepastdecade.Becausesemiconductorapplicationsrequireflat,rigidmaterialsthatcanwithstandthepressuresofmanufacturing,glasssubstrateshavegrowninMEMScapuses,aswellasotherelectronicsensorsanddevices.BOROFLOAT®,ahigh-gradeglasswithstrongthermal,chemical,andmechanicalproperties,hasbecomeapartnertosiliconintheseever-shrinkingdevices.BOROFLOAT®andsiliconwaferscanbepreciselyanodicallybondedforcertainMEMSapplications,anditcanactasacarrierwaferforspecificsiliconwaferapplicationsfeaturing3Darchitecture.Theglass’chemicalcomposition,perfectlyflatsurface,andrigidstructureprovideanidealcomplementtosiliconinthesesemiconductorapplications.TinaGallo,Manager,ApplicationsandLogisticServicesforSCHOTT'sHomeTechdivision
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