Lam Research TCP 9400 Poly Etcher (lampoly)

Lam 9400 TCP is a Polysilicon DryEtcher with Envision software; Clean category; for polysilicon and single crystal Silicon etches; maximum etch depth 3um. Skiptocontent Skiptonavigation SUNetIDLogin SUNetIDLogin Navigationmenu GuideMainMenu Equipment OperatingInstructions LampolyOperatingInstructions SNFLampolyEtcherSetup SNFLampolyRecipeSetup RelatedDocumentation Process(s) SummaryofDrySi,PolySiandAmorphousSiEtchProcessesinSNF TableofEtchersforASMLZeroLevelTargetMarks Reference(s) DryEtchEquipmentOverview DryEtchEquipmentTroubleshooting PROMRequest(s) AngledEtchingofSOIinLampolywithAnodizedAluminumSheathPlate Blockcopolymeretchinlampoly CleanProcessingofAluminumpostCMP ContaminationStudyofSemi-CleanSiGeinLAMpoly EtchofwaferpiecescutbyDISCOWafersawinLampoly EtchingofcontaminatedwaferpiecesinLampoly EtchingofwafersinlampolywithLiNbcoatedbyresist HBr/Cl2etchingAlNintheLampoly LampolyEtchofSionSi/SiO2/Metal/GlassSubstrates LampolyHBr/Cl2/O2etchingofsilicononlithiumniobate LampolyHBr/Cl2/O2etchingofsilicononlithiumniobiate LampolyHBr/Cl2/O2etchingofsiliconoxideonlithiumniobate Postwaferdicingpiecesinlampoly ProcessflowforetchingSiliconGermaniumoncontaminatedwaferswithaluminuminLAMpoly(clean) ProcessforusingtheAJAEvaporatorinaSemicleanFashion ProcessingofwaferswithembeddedTungstenalignmentmarksinthecleanequipmentgroup RequesttouseLampolytoetchSidepositedonALDoxide/metal UseofCrystalBond509-HMPinLampoly UseofCrystalbond555inLampoly Waferscribeandetchproceduretogointocleanetchtools LamResearchTCP9400PolyEtcher(lampoly) Overview Lam9400TCPisaPolysiliconDryEtcherwithEnvisionsoftware;Cleancategory;forpolysiliconandsinglecrystalSiliconetches;maximumetchdepth3um. Cleanliness: CleanSemiclean ProcessingTechnique(s) Etching> DryEtching> InductivelyCoupledPlasmaEtching(ICP) CapabilitiesandSpecifications PrimaryMaterialsEtched PrimaryMaterialsEtched:  PolySilicon(Si) Silicon(Si) OtherMaterialsEtched OtherMaterialsEtched:  Germanium(Ge) SiliconGermanium(SiGe) ProcessTemperatureRange:  Gases (Cl2) (80%He/20%O2) (He) (HBr) (N2) (O2) (C2F6) (CF4) SubstrateType SiliconSiliconGermanium SubstrateSizes 4inchwaferMaximumLoad: 25Notes: Singlewaferetchwithauto-loadingfromacassette.Equipmentoriginallyusedforgateetchingwithhighselectivitytothingateoxides. LabFacility,Location,andBadgerInformation LabOrganization: StanfordNanofabricationFacilityCleanroom(SNFCleanroom)Location: SNFCleanroomPaulGAllenL107BadgerArea: SNF:DryEtchingBadgerID: lampoly TrainingandMaintenance LabFacility: SNFCleanroomTrainingCharges: 1.00hoursPrimaryTrainer: MaryTangPrimaryMaintenance: ElmerEnriquezBackupMaintenance: MikeDickey Stepstobecomeatooluser BecomeamemberofSNF. Checkthetrainingcalendarforanyscheduledtraining: SNFTrainingCalendar . Contacttheprimarytrainer, MaryTang ,tosignupforthetrainingortoscheduleatrainingifnoneisscheduled. Readtherelevantoperatingprocedures: LampolyOperatingInstructions SNFLampolyRecipeSetup SNFLampolyEtcherSetup Onlinetrainingisoptional.SeeOpenOnlineCourseforgeneralinformationabouttheLagunitaonlinetraining.GotoOnlineNanoCourseLogintologindirectlytothecourse.Goto"nano@stanford"andthentothe"DryEtching"sectionforthethreevideosonplasmaetchingprinciplesandto"ChoosingaDryEtchingProcess"sectionforguidelinesforchoosingtherightequipment. Attendthein-persontrainingsessiontogetqualified. OperatingInstructions LampolyOperatingInstructions SNFLampolyEtcherSetup SNFLampolyRecipeSetup Printer-friendlyversion StanfordHome Maps&Directions SearchStanford EmergencyInfo TermsofUse Privacy Copyright Trademarks Non-Discrimination Accessibility ©StanfordUniversity,Stanford,California94305.