Evidence for Voltage-Driven Set/Reset ... - IEEE Xplore
文章推薦指數: 80 %
However, predicting the scaling capability of bipolar switching. RRAM devices in terms of area, switching time, and switching energy is mandatory for the ... SkiptoMainContent
延伸文章資訊
- 1Evidence for Voltage-Driven Set/Reset ... - IEEE Xplore
However, predicting the scaling capability of bipolar switching. RRAM devices in terms of area, s...
- 2Dynamics of set and reset processes on resistive switching ...
Reset follows a sigmoidal law. Abstract. In this work, we have characterized hafnium oxide based ...
- 3Gradual reset and set characteristics in yttrium oxide based ...
Resistive random access memory (RRAM) has attracted a lot of attention for more than a decade, as...
- 4master thesis - 國立交通大學機構典藏
applied these two ways to the forming & Set/Reset operations of RRAM, and we ... 2.8 The memory w...
- 5次世代電阻式記憶體發展 - 科技部
表一電阻式記憶體(RRAM)與其他記憶體元件之基本特性比較圖. Mainstream Memories ... 圖一RRAM 操作之Forming、SET 與RESET 過程. 化,因此極具研究...