Sub-12nm optical lithography with 4x pitch division and SMO-lite
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Another approach for scaling the “cut” pattern has also been studied. This involves the use of a hole pitch division process to create a grid ... SignIn ViewCart Help
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- 1平平都是7nm 性能、製程大不同! - 電子工程專輯
上面所述的這些指的是N7 HD低功耗(高密度)方案。這兩種不同的cell方案,鰭間距(fin pitch)都是30nm,不過閘極間距前者為57nm,後者是64nm。
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