EP1343198A2 - Process of forming an ultra-thin gate oxide ...
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EP1343198A2-Processofforminganultra-thingateoxidethroughdecoupledplasmanitridationanneal -GooglePatents Processofforminganultra-thingateoxidethroughdecoupledplasmanitridationanneal DownloadPDF Info Publicationnumber EP1343198A2 EP1343198A2 EP20030368017 EP03368017A
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- 1Airiti Library華藝線上圖書館_去耦電漿氮化閘極氧化層之元件特性
The Characteristics of MOS Devices with Nitrided Gate Oxide by Decoupling Plasma Nitridation. 廖顯皜...
- 2Mechanism of Silicon Dioxide Decoupled Plasma Nitridation ...
The mechanism for decoupled plasma nitridation of silicon dioxide thin films ... depth profile an...
- 3Decoupled Plasma Nitridation of Ultrathin Gate Oxides for 65 ...
Optical pre-oxide thickness are given in brackets (in nm). SiO2. Si. [N] (x1021 at.cm-3). - RTN. ...
- 4Impact of decoupled plasma nitridation of ultra-thin gate oxide ...
Download Citation | Impact of decoupled plasma nitridation of ultra-thin gate oxide on the perfor...
- 5Impact of decoupled plasma nitridation of ultra-thin gate oxide ...
Download Citation | Impact of decoupled plasma nitridation of ultra-thin gate oxide on the perfor...
