cf4蝕刻

關於「cf4蝕刻」標籤，搜尋引擎有相關的訊息討論：

Dry Etching Characteristics of Pb(Zr,Ti)O3 Films in CF4 ... - IOPscienceC. K. Hanish, J. W. Grizzle and F. L. Terry 1999 IEEE Trans. Semicond. Manuf. 12 323. CrossrefGoogle Scholar. [17]. J. W. Kim, Y. C. Kim and W. J. Lee 1995 ...Reactive Ion Etching of Sputter Deposited Tantalum with CF4 ...CRC Handbook of Chemistry and Physics, ed. R. C. Weast (CRC Press, Inc., Boca Raton, FL, 1987-1988) 68th ed., F-180. Google Scholar.Reactive ion etching of monocrystalline, polycrystalline, and ...... β‐SiC and hydrogenated amorphous a‐SiC:H in CF4/O2 mixtures was investigated. ... C. Y.-W. Yang, and G. L. Harris (Springer, Berlin, 1989), pp. 217–223. tw | tw[PDF] Reactive Ion Etching Selectivity of Si/SiO2 - ScholarlyCommons2019年3月1日 · CHF3 and CF4. Abstract. Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between SiO2. twReactive Ion Etching Selectivity of Si/SiO2 - ScholarlyCommons2019年3月1日 · Results show that CHF3 gives better selectivity (16:1) over CF4 (1.2 :1). On the other hand, the etch rate of SiO2 of CF4 is approximately ... twOn Relationships between Gas-Phase Chemistry and Reactive Ion ...2021年3月15日 · Volume 85 CRC Press; Boca Raton, FL, USA: 2004. ... ratio on gas-phase composition and etch rate in an inductively coupled CF4/Ar plasma.C. Bibliographie-du-chapitre-i-[-cardinaud2000, M. C. Cardinaud, P ...Ma-donnelly, F. P. Klemens, T. W. Sorsch, G. L. ... surface interactions during overetch of polycrystalline silicon gate etching with high-density HBr/O2 plasmas ...Recent Advances in Reactive Ion Etching and Applications of High ...Specifically, the different process gases that are employed in RIE of different material types include fluorine-based gases such as SF6 and CF4 for the etching ...Selective Etching of Hexagonal Boron Nitride by High-Pressure CF4 ...2020年12月4日 · ... one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. twEncyclopedia of Plasma Technology - Two Volume SetJauberteau, J.L.; Meeusen, G.L.; Haverlag, M.; Kroesen, G.M.W.; de Hoog, F.J. Photodetachment effect in a radio frequency plasma in CF4. Appl. Phys. Lett.